Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasers
Identifieur interne : 004695 ( Main/Repository ); précédent : 004694; suivant : 004696Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasers
Auteurs : RBID : Pascal:11-0014119Descripteurs français
- Pascal (Inist)
- Courant seuil, Photoluminescence, Etat excité, Laser semiconducteur, Laser point quantique, Propriété électronique, Résolution temporelle, Etat fondamental, Point quantique, Nanostructure, Composé binaire, Indium Arséniure, Semiconducteur III-V, Indium Phosphure, InAs, As In, In P, InP, Longueur cavité, 0130C, 4255P, Equation bilan transfert énergie.
English descriptors
- KwdEn :
Abstract
Thanks to optimized growth techniques, a high density of uniformly sized InAs quantum dots (QD) can be grown on InP(113)B substrates. Low threshold currents obtained at 1.54 μm for broad area lasers are promising for the future. This paper is a review of the recent progress toward the understanding of electronic properties, carrier dynamics and device modelling in this system, taking into account materials and nanostructures properties. A first complete analysis of the carrier dynamics is done by combining time-resolved photoluminescence experiments and a dynamic three-level model, for the QD ground state (GS), the QD excited state (ES) and the wetting layer/barrier (WL). Auger coefficients for the intradot assisted relaxation are determined. GS saturation is also introduced. The observed double laser emission for a particular cavity length is explained by adding photon populations in the cavity with ES and GS resonant energies. Direct carrier injection from the WL to the GS related to the weak carrier confinement in the QD is evidenced. In a final step, this model is extended to QD GS and ES inhomogeneous broadening by adding multipopulation rate equations (MPREM). The model is now able to reproduce the spectral behavior in InAs-InP QD lasers. The almost continuous transition from the GS to the ES as a function of cavity length is then attributed to the large QD GS inhomogeneous broadening comparable to the GS-ES lasing energy difference. Gain compression and Auger effects on the GS transition are also be discussed.
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nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author><author><name sortKey="Dore, Francois" uniqKey="Dore F">François Dore</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CNRS, INSA de Rennes, FOTON, Fonctions Optiques pour les Technologies de l'informatiON, CS70839</s1><s2>35708 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author><author><name sortKey="Pedesseau, Laurent" uniqKey="Pedesseau L">Laurent Pedesseau</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CNRS, INSA de Rennes, FOTON, Fonctions Optiques pour les Technologies de l'informatiON, CS70839</s1><s2>35708 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author><author><name sortKey="Corre, Alain Le" uniqKey="Corre A">Alain Le Corre</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CNRS, INSA de Rennes, FOTON, Fonctions Optiques pour les Technologies de l'informatiON, CS70839</s1><s2>35708 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author><author><name sortKey="Loualiche, Slimane" uniqKey="Loualiche S">Slimane Loualiche</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CNRS, INSA de Rennes, FOTON, Fonctions Optiques pour les Technologies de l'informatiON, CS70839</s1><s2>35708 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author><author><name sortKey="Miska, Patrice" uniqKey="Miska P">Patrice Miska</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>CNRS, Université de Nancy, UPV Metz, Institut Jean Lamour, Faculté des Sciences, Boulevard des Aiguillettes, BP239</s1><s2>54506 Vandoeuvre-lès-Nancy</s2><s3>FRA</s3><sZ>10 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Lorraine</region><settlement type="city">Vandoeuvre-lès-Nancy</settlement></placeName><orgName type="university">Nancy-Université</orgName></affiliation></author><author><name sortKey="Marie, Xavier" uniqKey="Marie X">Xavier Marie</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>CNRS, Université de Toulouse, INSA, UPS, LPCNO, 135 Avenue de Rangueil</s1><s2>31077 Toulouse</s2><s3>FRA</s3><sZ>11 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Midi-Pyrénées</region><settlement type="city">Toulouse</settlement></placeName></affiliation></author><author><name sortKey="Gioannini, Mariangella" uniqKey="Gioannini M">Mariangella Gioannini</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Dipartimento di Elettronica, Politecnico di Torino, Corso Duca degli Abruzzi, 24</s1><s2>Torino</s2><s3>ITA</s3><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Italie</country><placeName><settlement type="city">Turin</settlement><region type="région" nuts="2">Piémont</region></placeName></affiliation></author><author><name sortKey="Montrosset, Ivo" uniqKey="Montrosset I">Ivo Montrosset</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Dipartimento di Elettronica, Politecnico di Torino, Corso Duca degli Abruzzi, 24</s1><s2>Torino</s2><s3>ITA</s3><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Italie</country><placeName><settlement type="city">Turin</settlement><region type="région" nuts="2">Piémont</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0014119</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 11-0014119 INIST</idno><idno type="RBID">Pascal:11-0014119</idno><idno type="wicri:Area/Main/Corpus">003934</idno><idno type="wicri:Area/Main/Repository">004695</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term><term>Electronic properties</term><term>Excited states</term><term>Ground states</term><term>III-V semiconductors</term><term>Indium Arsenides</term><term>Indium Phosphides</term><term>Nanostructures</term><term>Photoluminescence</term><term>Quantum dot lasers</term><term>Quantum dots</term><term>Rate equation</term><term>Semiconductor lasers</term><term>Threshold current</term><term>Time resolution</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Courant seuil</term><term>Photoluminescence</term><term>Etat excité</term><term>Laser semiconducteur</term><term>Laser point quantique</term><term>Propriété électronique</term><term>Résolution temporelle</term><term>Etat fondamental</term><term>Point quantique</term><term>Nanostructure</term><term>Composé binaire</term><term>Indium Arséniure</term><term>Semiconducteur III-V</term><term>Indium Phosphure</term><term>InAs</term><term>As In</term><term>In P</term><term>InP</term><term>Longueur cavité</term><term>0130C</term><term>4255P</term><term>Equation bilan transfert énergie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Thanks to optimized growth techniques, a high density of uniformly sized InAs quantum dots (QD) can be grown on InP(113)B substrates. Low threshold currents obtained at 1.54 μm for broad area lasers are promising for the future. This paper is a review of the recent progress toward the understanding of electronic properties, carrier dynamics and device modelling in this system, taking into account materials and nanostructures properties. A first complete analysis of the carrier dynamics is done by combining time-resolved photoluminescence experiments and a dynamic three-level model, for the QD ground state (GS), the QD excited state (ES) and the wetting layer/barrier (WL). Auger coefficients for the intradot assisted relaxation are determined. GS saturation is also introduced. The observed double laser emission for a particular cavity length is explained by adding photon populations in the cavity with ES and GS resonant energies. Direct carrier injection from the WL to the GS related to the weak carrier confinement in the QD is evidenced. In a final step, this model is extended to QD GS and ES inhomogeneous broadening by adding multipopulation rate equations (MPREM). The model is now able to reproduce the spectral behavior in InAs-InP QD lasers. The almost continuous transition from the GS to the ES as a function of cavity length is then attributed to the large QD GS inhomogeneous broadening comparable to the GS-ES lasing energy difference. Gain compression and Auger effects on the GS transition are also be discussed.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>7720</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasers</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Semiconductor lasers and laser dynamics IV : 12-16 April 2010, Brussels, Belgium</s1></fA09><fA11 i1="01" i2="1"><s1>EVEN (Jacky)</s1></fA11><fA11 i1="02" i2="1"><s1>GRILLOT (Frédéric)</s1></fA11><fA11 i1="03" i2="1"><s1>VESELINOV (Kiril)</s1></fA11><fA11 i1="04" i2="1"><s1>PIRON (Rozenn)</s1></fA11><fA11 i1="05" i2="1"><s1>CORNET (Charles)</s1></fA11><fA11 i1="06" i2="1"><s1>DORE (François)</s1></fA11><fA11 i1="07" i2="1"><s1>PEDESSEAU (Laurent)</s1></fA11><fA11 i1="08" i2="1"><s1>CORRE (Alain Le)</s1></fA11><fA11 i1="09" i2="1"><s1>LOUALICHE (Slimane)</s1></fA11><fA11 i1="10" i2="1"><s1>MISKA (Patrice)</s1></fA11><fA11 i1="11" i2="1"><s1>MARIE (Xavier)</s1></fA11><fA11 i1="12" i2="1"><s1>GIOANNINI (Mariangella)</s1></fA11><fA11 i1="13" i2="1"><s1>MONTROSSET (Ivo)</s1></fA11><fA12 i1="01" i2="1"><s1>PANAJOTOV (Krassimir P.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>CNRS, INSA de Rennes, FOTON, Fonctions Optiques pour les Technologies de l'informatiON, CS70839</s1><s2>35708 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>CNRS, Université de Nancy, UPV Metz, Institut Jean Lamour, Faculté des Sciences, Boulevard des Aiguillettes, BP239</s1><s2>54506 Vandoeuvre-lès-Nancy</s2><s3>FRA</s3><sZ>10 aut.</sZ></fA14><fA14 i1="03"><s1>CNRS, Université de Toulouse, INSA, UPS, LPCNO, 135 Avenue de Rangueil</s1><s2>31077 Toulouse</s2><s3>FRA</s3><sZ>11 aut.</sZ></fA14><fA14 i1="04"><s1>Dipartimento di Elettronica, Politecnico di Torino, Corso Duca degli Abruzzi, 24</s1><s2>Torino</s2><s3>ITA</s3><sZ>12 aut.</sZ><sZ>13 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA18 i1="02" i2="1"><s1>B-BHOT--Brussels Photonics Team</s1><s3>BEL</s3><s9>org-cong.</s9></fA18><fA18 i1="03" i2="1"><s1>Comité belge d'optique</s1><s3>BEL</s3><s9>org-cong.</s9></fA18><fA20><s2>77202F.1-77202F.12</s2></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham, Wash.</s2></fA25><fA26 i1="01"><s0>0-8194-8193-9</s0></fA26><fA26 i1="02"><s0>978-0-8194-8193-1</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000174701480600</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>21 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0014119</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Thanks to optimized growth techniques, a high density of uniformly sized InAs quantum dots (QD) can be grown on InP(113)B substrates. Low threshold currents obtained at 1.54 μm for broad area lasers are promising for the future. This paper is a review of the recent progress toward the understanding of electronic properties, carrier dynamics and device modelling in this system, taking into account materials and nanostructures properties. A first complete analysis of the carrier dynamics is done by combining time-resolved photoluminescence experiments and a dynamic three-level model, for the QD ground state (GS), the QD excited state (ES) and the wetting layer/barrier (WL). Auger coefficients for the intradot assisted relaxation are determined. GS saturation is also introduced. The observed double laser emission for a particular cavity length is explained by adding photon populations in the cavity with ES and GS resonant energies. Direct carrier injection from the WL to the GS related to the weak carrier confinement in the QD is evidenced. In a final step, this model is extended to QD GS and ES inhomogeneous broadening by adding multipopulation rate equations (MPREM). The model is now able to reproduce the spectral behavior in InAs-InP QD lasers. The almost continuous transition from the GS to the ES as a function of cavity length is then attributed to the large QD GS inhomogeneous broadening comparable to the GS-ES lasing energy difference. Gain compression and Auger effects on the GS transition are also be discussed.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC02 i1="02" i2="3"><s0>001B00A30C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Courant seuil</s0><s5>03</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Threshold current</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>04</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etat excité</s0><s5>05</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Excited states</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Laser semiconducteur</s0><s5>09</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Semiconductor lasers</s0><s5>09</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Laser point quantique</s0><s5>11</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Quantum dot lasers</s0><s5>11</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Propriété électronique</s0><s5>41</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Electronic properties</s0><s5>41</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Propiedad electrónica</s0><s5>41</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Résolution temporelle</s0><s5>42</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Time resolution</s0><s5>42</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Etat fondamental</s0><s5>43</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Ground states</s0><s5>43</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Point quantique</s0><s5>47</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Quantum dots</s0><s5>47</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Nanostructure</s0><s5>48</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Nanostructures</s0><s5>48</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Composé binaire</s0><s5>50</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Binary compounds</s0><s5>50</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Indium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>52</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>52</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Indium Phosphure</s0><s2>NC</s2><s2>NA</s2><s5>53</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Indium Phosphides</s0><s2>NC</s2><s2>NA</s2><s5>53</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>In P</s0><s4>INC</s4><s5>76</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Longueur cavité</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>0130C</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>4255P</s0><s4>INC</s4><s5>91</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Equation bilan transfert énergie</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Rate equation</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>003</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Semiconductor lasers and laser dynamics</s1><s2>04</s2><s3>Brussels BEL</s3><s4>2010</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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